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Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 3, 页码: 3427-3434
Authors:  WEI LIU ;   DEGANG ZHAO ;   DESHENG JIANG ;   DONGPING SHI ;   JIANJUN ZHU ;   ZONGSHUN LIU ;   PING CHEN ;   JING YANG ;   FENG LIANG ;   SHUANGTAO LIU ;   YAO XING ;   LIQUN ZHANG ;   WENJIE WANG ;   MO LI ;   YUANTAO ZHANG ;   GUOTONG DU
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Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and In x Ga 1-x N lower waveguide 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 731, 页码: 243-247
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Wei Liu;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Wenjie Wang;  Mo Li;  Yuantao Zhang;  Guotong Du
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Influence of hydrogen impurity on the resistivity of low temperature grown p-Al x Ga 1-x N layer (0.08 ? x ? 0.104) 期刊论文
Superlattices and microstructures, 2018, 卷号: 113, 页码: 720-725
Authors:  Feng Liang;  Ying Yang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Wei Liu;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Wenjie Wang;  Mo Li;  Yuantao Zhang;  Guotong Du
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Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption 期刊论文
Applied Surface Science, 2018, 卷号: 456, 页码: 487-492
Authors:  Wei Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Ping Chen;  Zongshun Liu;  Feng Liang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang;  Wenjie Wang;  Mo Li;  Yuantao Zhang;  Guotong Du
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Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 页码: 744
Authors:  Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang ;   Mo Li ;   Yuantao Zhang;   Guotong Du
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Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 期号: 12, 页码: 1026
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang
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Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 17, 页码: 21736-21744
Authors:  LIYUAN PENG ;   DEGANG ZHAO ;   DESHENG JIANG ;   JIANJUN ZHU ;   ZONGSHUN LIU ;   PING CHEN ;   JING YANG ;   WEI LIU ;   FENG LIANG ;   YAO XING ;   SHUANGTAO LIU ;   LIQUN ZHANG ;   WENJIE WANG ;   MO LI ;   YUANTAO ZHANG ;   GUOTONG DU
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The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Wei Liu ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang ;   Wenjie Wang ;   Mo Li ;   Yuantao Zhang ;   Guotong Du
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Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs 期刊论文
Superlattices and Microstructures, 2018, 卷号: 114, 页码: 32-36
Authors:  Xiaowei Wang ;   Jing Yang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Wei Liu ;   Feng Liang;   Shuangtao Liu ;   Yao Xing ;   Wenjie Wang ;   Mo Li
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Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 4, 页码: 1503107
Authors:  Jing Yang;  Degang Zhao;  Zongshum Liu;  De-Sheng Jiang;  Jianjun Zhu;  Ping Chen;  Feng Liang;  S. T. Liu;  Wei Liu;  Yao Xing;  Mo Li
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