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The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films 期刊论文
MATERIALS LETTERS, 2011, 卷号: 65, 期号: 4, 页码: 667-669
Authors:  Sun LL;  Liu C;  Li JM;  Wang JX;  Yan FW;  Zeng YP;  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn
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Diluted Magnetic Semiconductors (Dmss)  Ion implantatIon  Room-temperature Ferromagnetic Properties  Room-temperature  
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.16108
Authors:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW;  Wang GH;  Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
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Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe  
GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长 期刊论文
物理学报, 2011, 卷号: 60, 期号: 1, 页码: 016108-1-016108-6
Authors:  王兵;  李志聪;  姚然;  梁萌;  闫发旺;  王国宏
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Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文
MATERIALS LETTERS, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Authors:  Sun LL (Sun Lili);  Liu C (Liu Chao);  Li JM (Li Jianming);  Wang JX (Wang Junxi);  Yan FW (Yan Fawang);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
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Magnetic Materials  Semiconductors  Ion implantatIon  
一种氮化物薄膜外延生长的方法 专利
专利类型: 发明, 申请日期: 2009-06-03, 公开日期: 3996
Inventors:  闫发旺;  高海永;  张 扬;  张会肖;  李晋闽;  曾一平;  王国宏 
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用于氮化物外延生长的纳米级图形衬底的制作方法 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高海永;  樊中朝;  李晋闽;  曾一平;  王国宏;  张会肖;  王军喜;  张扬
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一种利用图形化衬底提高GaN基LED发光效率的方法 专利
专利类型: 发明, 申请日期: 2009-01-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高永海;  张扬;  李晋闽;  曾一平;  王国宏;  张会肖
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Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 11, 页码: Art. No. 113921
Authors:  Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail Address: lilisuny@sohu.com
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Annealing  
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Authors:  Sun LL;  Yan FW;  Wang JX;  Zhang HX;  Zeng YP;  Wang GH;  Li JM;  Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.cn
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Electron-affinity  
The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films 期刊论文
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 卷号: 162, 期号: 3, 页码: 209-212
Authors:  Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.cn
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Ion implantatIon  Metal Organic Chemical Vapour Deposition (Mocvd)  Diluted Magnetic Semiconductor (Dms)  Nonpolar A-plane Gan