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Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method
Sun LL (Sun Lili); Liu C (Liu Chao); Li JM (Li Jianming); Wang JX (Wang Junxi); Yan FW (Yan Fawang); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
2010
Source PublicationMATERIALS LETTERS
Volume64Issue:9Pages:1031-1033
AbstractDiluted-magnetic GaN:Sm:Eu films have been fabricated by co-implantation of Sm and Eu ions into c-plane (0001) GaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. Compared with GaN:Sm films, more defects have been introduced into GaN:Sm:Eu films due to the Eu implantation process. According to the SQUID analysis, GaN:Sm:Eu films exhibit clear room-temperature ferromagnetism. Moreover, GaN:Sm:Eu films show a lower saturation magnetization (Ms) than GaN:Sm films.
metadata_24其它
KeywordMagnetic Materials Semiconductors Ion implantatIon
Subject Area半导体材料
Funding OrganizationNatural Science Foundation of China 60876004
Indexed BySCI
Language英语
Date Available2010-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11227
Collection半导体材料科学中心
Corresponding AuthorSun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
Recommended Citation
GB/T 7714
Sun LL ,Liu C ,Li JM ,et al. Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method[J]. MATERIALS LETTERS,2010,64(9):1031-1033.
APA Sun LL .,Liu C .,Li JM .,Wang JX .,Yan FW .,...&Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn.(2010).Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method.MATERIALS LETTERS,64(9),1031-1033.
MLA Sun LL ,et al."Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method".MATERIALS LETTERS 64.9(2010):1031-1033.
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