| Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method | |
| Sun LL (Sun Lili); Liu C (Liu Chao); Li JM (Li Jianming); Wang JX (Wang Junxi); Yan FW (Yan Fawang); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn | |
| 2010 | |
| Source Publication | MATERIALS LETTERS
 |
| Volume | 64Issue:9Pages:1031-1033 |
| Abstract | Diluted-magnetic GaN:Sm:Eu films have been fabricated by co-implantation of Sm and Eu ions into c-plane (0001) GaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. Compared with GaN:Sm films, more defects have been introduced into GaN:Sm:Eu films due to the Eu implantation process. According to the SQUID analysis, GaN:Sm:Eu films exhibit clear room-temperature ferromagnetism. Moreover, GaN:Sm:Eu films show a lower saturation magnetization (Ms) than GaN:Sm films. |
| metadata_24 | 其它 |
| Keyword | Magnetic Materials Semiconductors Ion implantatIon |
| Subject Area | 半导体材料 |
| Funding Organization | Natural Science Foundation of China 60876004 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2010-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/11227 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn |
| Recommended Citation GB/T 7714 | Sun LL ,Liu C ,Li JM ,et al. Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method[J]. MATERIALS LETTERS,2010,64(9):1031-1033. |
| APA | Sun LL .,Liu C .,Li JM .,Wang JX .,Yan FW .,...&Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn.(2010).Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method.MATERIALS LETTERS,64(9),1031-1033. |
| MLA | Sun LL ,et al."Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method".MATERIALS LETTERS 64.9(2010):1031-1033. |
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| Structural and magne（505KB） | 限制开放 | License | Application Full Text | |||
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