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氮化物深紫外LED研究新进展 期刊论文
SCIENTIA SINICA Physica, Mechanica & Astronomica, 2015, 卷号: 45, 期号: 6, 页码: 067303
Authors:  王军喜;  闫建昌;  郭亚楠;  张韵;  田迎冬;  朱邵歆;  陈翔;  孙莉莉;  李晋闽
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Thermal and mechanical effects of voids within flip chip soldering in LED packages 期刊论文
MICROELECTRONICS RELIABILITY, 2014, 卷号: 54, 期号: 9-10, 页码: 2028-2033
Authors:  Liu, Y;  Leung, SYY;  Zhao, J;  Wong, CKY;  Yuan, CA;  Zhang, GQ;  Sun, FL;  Luo, LL
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films 期刊论文
MATERIALS LETTERS, 2011, 卷号: 65, 期号: 4, 页码: 667-669
Authors:  Sun LL;  Liu C;  Li JM;  Wang JX;  Yan FW;  Zeng YP;  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn
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Diluted Magnetic Semiconductors (Dmss)  Ion implantatIon  Room-temperature Ferromagnetic Properties  Room-temperature  
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Authors:  Sun YP (Sun Yuanping);  Sun Y (Sun Yuanping);  Cho YH (Cho Yong-Hoon);  Wang H (Wang Hui);  Wang LL (Wang Lili);  Zhang SM (Zhang Shuming);  Yang H (Yang Hui);  Sun, YP, Yantai Univ, Inst Sci & Technol Optoelect Informat, Yantai 264005, Peoples R China. 电子邮箱地址: ypsun@ytu.edu.cn
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Inn  Burstein-moss Effect  Quantum Confinement Effect  Activation Energy  Fundamental-band Gap  Well Structures  Emission  Single  
非极性GaN基稀磁半导体的制备与性质研究 学位论文
, 北京: 中国科学院研究生院, 2010
Authors:  孙莉莉
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Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文
MATERIALS LETTERS, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Authors:  Sun LL (Sun Lili);  Liu C (Liu Chao);  Li JM (Li Jianming);  Wang JX (Wang Junxi);  Yan FW (Yan Fawang);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
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Magnetic Materials  Semiconductors  Ion implantatIon  
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 138-141
Authors:  Sun YP;  Cho YH;  Dai ZH;  Wang WT;  Wang H;  Wang LL;  Zhang SM;  Yang H;  Sun, YP, Yantai Univ, Inst Sci & Technol Optoelect Informat, Yantai 264005, Peoples R China. ypsun@ytu.edu.cn
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Band-gap  Indium Nitride  Transport  Emission  
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 11, 页码: Art. No. 113921
Authors:  Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail Address: lilisuny@sohu.com
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Annealing