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GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长 期刊论文
物理学报, 2011, 卷号: 60, 期号: 1, 页码: 016108-1-016108-6
Authors:  王兵;  李志聪;  姚然;  梁萌;  闫发旺;  王国宏
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Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文
MATERIALS LETTERS, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Authors:  Sun LL (Sun Lili);  Liu C (Liu Chao);  Li JM (Li Jianming);  Wang JX (Wang Junxi);  Yan FW (Yan Fawang);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
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Magnetic Materials  Semiconductors  Ion implantatIon  
一种氮化物薄膜外延生长的方法 专利
专利类型: 发明, 申请日期: 2009-06-03, 公开日期: 3996
Inventors:  闫发旺;  高海永;  张 扬;  张会肖;  李晋闽;  曾一平;  王国宏 
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用于氮化物外延生长的纳米级图形衬底的制作方法 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高海永;  樊中朝;  李晋闽;  曾一平;  王国宏;  张会肖;  王军喜;  张扬
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一种利用图形化衬底提高GaN基LED发光效率的方法 专利
专利类型: 发明, 申请日期: 2009-01-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高永海;  张扬;  李晋闽;  曾一平;  王国宏;  张会肖
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Structural, morphological, and magnetic characteristics of Cu-implanted nonpolar GaN films 期刊论文
APPLIED SURFACE SCIENCE, 2009, 卷号: 256, 期号: 5, 页码: 1361-1364
Authors:  Sun, LL (Sun, Lili);  Yan, FW (Yan, Fawang);  Zhang, HX (Zhang, Huixiao);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Wang, GH (Wang, Guohong);  Li, JM (Li, Jinmin);  Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Qinghua E Rd A35, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
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Diluted Magnetic Semiconductors (Dmss)  
The impact of implantation dose on the characteristics of diluted-magnetic nonpolar GaN:Cu films 期刊论文
MATERIALS LETTERS, 2009, 卷号: 63, 期号: 29, 页码: 2574-2576
Authors:  Sun, LL (Sun, Lili);  Yan, FW (Yan, Fawang);  Zhang, HX (Zhang, Huixiao);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Wang, GH (Wang, Guohong);  Li, JM (Li, Jinmin);  Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
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Diluted Magnetic Semiconductors (Dmss)  
用于氮化物外延生长的图形蓝宝石衬底的制作方法 专利
专利类型: 发明, 申请日期: 2008-12-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  闫发旺;  高海永;  张扬;  李晋闽;  曾一平;  王国宏;  张会肖
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高晶体质量氮化物外延生长所用图形衬底的制备方法 专利
专利类型: 发明, 申请日期: 2008-10-29, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张扬;  闫发旺;  高海永;  曾一平;  王国宏;  张会肖;  李晋闽
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Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 2, 页码: Art.No.023506
Authors:  Yan FW (Yan Fawang);  Gao HY (Gao Haiyong);  Zhang HX (Zhang Huixiao);  Wang GH (Wang Guohong);  Yang FH (Yang Fuhua);  Yan JC (Yan Jianchang);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li, Jinmin);  Yan, FW, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China. 电子邮箱地址: fwyan@red.semi.ac.cn
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Gallium Nitride