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Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes 期刊论文
Appl. Phys. Express, 2013, 卷号: 6, 期号: 10, 页码: 102103
Authors:  Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Zhicong Li, Jing Li, Xiaoyan Yi, and Guohong Wang
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Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 1, 页码: 011105
Authors:  Li, Hongjian;  Kang, Junjie;  Li, Panpan;  Ma, Jun;  Wang, Hui;  Liang, Meng;  Li, Zhicong;  Li, Jing;  Yi, Xiaoyan;  Wang, Guohong
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Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well 期刊论文
APPLIED PHYSICS EXPRESS, 2013, 卷号: 6, 期号: 5, 页码: 052102
Authors:  Li, Hongjian;  Li, Panpan;  Kang, Junjie;  Li, Zhi;  Zhang, Yiyun;  Li, Zhicong;  Li, Jing;  Yi, Xiaoyan;  Li, Jinmin;  Wang, Guohong
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Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 104002
Authors:  Li, Panpan;  Li, Hongjian;  Zhang, Yiyun;  Li, Zhicong;  Liang, Meng;  Li, Jing;  Wang, Guohong
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Low threading dislocation density in GaN films grown on patterned sapphire substrates 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 11, 页码: 113002
Authors:  Liang, Meng;  Wang, Guohong;  Li, Hongjian;  Li, Zhicong;  Yao, Ran;  Wang, Bing;  Li, Panpan;  Li, Jing;  Yi, Xiaoyan;  Wang, Junxi;  Li, Jinmin
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高抗静电能力氮化镓基LED外延结构与MOCVD生长工艺研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  李志聪
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GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长 期刊论文
物理学报, 2011, 卷号: 60, 期号: 1, 页码: 016108-1-016108-6
Authors:  王兵;  李志聪;  姚然;  梁萌;  闫发旺;  王国宏
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Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 卷号: 32, 期号: 11, 页码: 114007
Authors:  Li, Zhicong;  Li, Panpan;  Wang, Bing;  Li, Hongjian;  Liang, Meng;  Yao, Ran;  Li, Jing;  Deng, Yuanming;  Yi, Xiaoyan;  Wang, Guohong;  Li, Jinmin;  Li, Z.(
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Diodes  Electrostatic Devices  Electrostatic Discharge  Gallium Alloys  Gallium Nitride  Light Emission  
一种氮化镓基发光二极管的外延粗化方法 专利
专利类型: 发明, 专利号: CN102214739A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  李志聪;  姚然;  王兵;  梁萌;  李璟;  王国宏;  李晋闽
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一种氮化镓外延中的相变成核的生长方法 专利
专利类型: 发明, 专利号: CN201010145087.3, 公开日期: 2011-08-31
Inventors:  王兵;  李志聪;  王国宏;  闫发旺;  姚然;  王军喜;  李晋闽
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