Knowledge Management System Of Institute of Semiconductors,CAS
用于氮化物外延生长的纳米级图形衬底的制作方法 | |
闫发旺; 高海永; 樊中朝; 李晋闽; 曾一平; 王国宏; 张会肖; 王军喜; 张扬 | |
2009-02-25 | |
Date Available | 2009-06-04 ; 2009-06-11 |
Subtype | 发明 |
Application Date | 2007-08-22 |
Language | 中文 |
Application Number | CN200710120612.4 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/4309 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 闫发旺,高海永,樊中朝,等. 用于氮化物外延生长的纳米级图形衬底的制作方法[P]. 2009-02-25. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
CN200710120612.4.pdf(556KB) | 限制开放 | -- | Application Full Text |
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