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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
用于氮化物外延生长的纳米级图形衬底的制作方法
闫发旺; 高海永; 樊中朝; 李晋闽; 曾一平; 王国宏; 张会肖; 王军喜; 张扬
2009-02-25
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-08-22
Language中文
Application NumberCN200710120612.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4309
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 闫发旺,高海永,樊中朝,等. 用于氮化物外延生长的纳米级图形衬底的制作方法[P]. 2009-02-25.
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CN200710120612.4.pdf（556KB） 限制开放--Application Full Text
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