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Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Authors:  Sun YP (Sun Yuanping);  Sun Y (Sun Yuanping);  Cho YH (Cho Yong-Hoon);  Wang H (Wang Hui);  Wang LL (Wang Lili);  Zhang SM (Zhang Shuming);  Yang H (Yang Hui);  Sun, YP, Yantai Univ, Inst Sci & Technol Optoelect Informat, Yantai 264005, Peoples R China. 电子邮箱地址: ypsun@ytu.edu.cn
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Inn  Burstein-moss Effect  Quantum Confinement Effect  Activation Energy  Fundamental-band Gap  Well Structures  Emission  Single  
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 138-141
Authors:  Sun YP;  Cho YH;  Dai ZH;  Wang WT;  Wang H;  Wang LL;  Zhang SM;  Yang H;  Sun, YP, Yantai Univ, Inst Sci & Technol Optoelect Informat, Yantai 264005, Peoples R China. ypsun@ytu.edu.cn
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Band-gap  Indium Nitride  Transport  Emission  
Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 7, 页码: Art.No.071920
Authors:  Tang YQ;  Shen B;  He XW;  Han K;  Tang N;  Chen WH;  Yang ZJ;  Zhang GY;  Chen YH;  Tang CG;  Wang ZG;  Cho KS;  Chen YF;  Tang, YQ, Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. 电子邮箱地址: bshen@pku.edu.cn;  yhchen@red.semi.ac.cn
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Polarization