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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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Magnetoresistance in a nominally undoped InGaN thin film 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 1, 页码: 63-66
Authors:  Ding K;  Zeng YP;  Li YY;  Cui LJ;  Wang JX;  Lu HX;  Cong PP;  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dingkai@red.semi.ac.cn
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Negative Magnetoresistance  Diodes  
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 2, 页码: Art. No. 021001
Authors:  Ding K;  Zeng YP;  Duan RF;  Wei XC;  Wang JX;  Ma P;  Lu HX;  Cong PP;  Li JM;  Ding K Chinese Acad Sci Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: dingkai@red.semi.ac.cn
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Localization  Semiconductors  Emission  Boxes  Band  
A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes 期刊论文
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 卷号: 97, 期号: 2, 页码: 465-468
Authors:  Ding K (Ding, K.);  Zeng YP (Zeng, Y. P.);  Wei XC (Wei, X. C.);  Li ZC (Li, Z. C.);  Wang JX (Wang, J. X.);  Lu HX (Lu, H. X.);  Cong PP (Cong, P. P.);  Yi XY (Yi, X. Y.);  Wang GH (Wang, G. H.);  Li JM (Li, J. M.);  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dingkai@red.semi.ac.cn
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氮化物半导体发光二极管外延片、器件及其制备方法 专利
专利类型: 发明, 公开日期: 2014-05-21
Inventors:  闫建昌;  王军喜;  张韵;  丛培沛;  孙莉莉;  董鹏;  田迎冬;  李晋闽
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一种具有DBR高反射结构的紫外发光二极管及其制备方法 专利
专利类型: 发明, 公开日期: 2013-07-10
Inventors:  曾建平;  闫建昌;  王军喜;  丛培沛;  孙莉莉;  董鹏;  李晋闽
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具有反射欧姆接触电极的紫外发光二极管的基片 专利
专利类型: 发明, 公开日期: 2012-10-03
Inventors:  董鹏;  闫建昌;  王军喜;  孙莉莉;  曾建平;  丛培沛;  李晋闽
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一种具有高反射薄膜的紫外发光二极管及其制作方法 专利
专利类型: 发明, 公开日期: 2013-06-19
Inventors:  曾建平;  闫建昌;  王军喜;  丛培沛;  孙莉莉;  董鹏;  李晋闽
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紫外共振腔发光二极管 专利
专利类型: 发明, 公开日期: 2013-08-07
Inventors:  曾建平;  闫建昌;  王军喜;  丛培沛;  孙莉莉;  董鹏;  李晋闽
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