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10 Gb/s电吸收调制器的微波封装设计
刘宇; 谢亮; 袁海庆; 张家宝; 祝宁华; 孙长征; 熊兵; 罗毅
2005
Source Publication中国激光
Volume32Issue:11Pages:1495-1498
Abstract在高速光电子器件的微波封装过程中,需要综合考虑封装寄生参数和芯片寄生参数对器件高频性能的影响。利用封装寄生参数对芯片寄生参数的补偿作用,成功实现了10Gb/s电吸收调制激光器(EML)的高频封装。通过封装前后芯片和器件的小信号频率响应测试结果对比,器件的反射参数和传输参数有所改善,3dB带宽达到10GHz;并进行了10Gb/s速率的光纤传输实验,经过40km光纤传输后通道代价不到1dBm(误码率为10^-12),满足10Gb/s长距离光纤传输系统的要求。
metadata_83中国科学院半导体研究所;清华大学
Subject Area光电子学
Funding Organization国家973计划,国家863计划资助项目.
Indexed ByCSCD
Language中文
CSCD IDCSCD:2191813
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16825
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘宇,谢亮,袁海庆,等. 10 Gb/s电吸收调制器的微波封装设计[J]. 中国激光,2005,32(11):1495-1498.
APA 刘宇.,谢亮.,袁海庆.,张家宝.,祝宁华.,...&罗毅.(2005).10 Gb/s电吸收调制器的微波封装设计.中国激光,32(11),1495-1498.
MLA 刘宇,et al."10 Gb/s电吸收调制器的微波封装设计".中国激光 32.11(2005):1495-1498.
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