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高功率密度激光二极管叠层散热结构的热分析 期刊论文
发光学报, 2016, 卷号: 37, 期号: 1, 页码: 81-87
Authors:  井红旗;  仲莉;  倪羽茜;  张俊杰;  刘素平;  马骁宇
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Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 18, 页码: Art.No.182505
Authors:  Chen L;  Yan S;  Xu PF;  Lu J;  Wang WZ;  Deng JJ;  Qian X;  Ji Y;  Zhao JH;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jhzhao@red.semi.ac.cn
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Annealing  
Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.602110
Authors:  Cong GW;  Peng WQ;  Wei HY;  Han XX;  Wu JJ;  Liu XL;  Zhu QS;  Wang ZG;  Lu JG;  Ye ZZ;  Zhu LP;  Qian HJ;  Su R;  Hong CH;  Zhong J;  Ibrahim K;  Hu TD;  Cong, GW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: gwcong@semi.ac.cn
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P-type Conduction  Thin-films  Ohmic Contacts  
Aluminium doping induced enhancement of p-d coupling in ZnO 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087
Authors:  Cong GW;  Peng WQ;  Wei HY;  Liu XL;  Wu JJ;  Han XX;  Zhu QS;  Wang ZG;  Ye ZZ;  Lu JG;  Zhu LP;  Qian HJ;  Su R;  Hong CH;  Zhong J;  Ibrahim K;  Hu TD;  Cong, GW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: gwcong@semi.ac.cn
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Electronic-structure Calculations  Ii-vi Semiconductors  Thin-films  Photoelectron-spectroscopy  Doped Zno  1st-principles  Conduction  States  
应变自组装InAlAs量子点材料和红光量子点激光器 期刊论文
固体电子学研究与进展, 2002, 卷号: 22, 期号: 2, 页码: 199-201
Authors:  徐波;  刘会贇;  王占国;  韩勤;  钱家骏;  梁基本;  丁鼎;  刘峰奇;  张金福;  张秀兰
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High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 18, 页码: 2868-2870
Authors:  Liu HY;  Xu B;  Wei YQ;  Ding D;  Qian JJ;  Han Q;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Temperature-dependence  
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 4, 页码: 2048-2050
Authors:  Liu HY;  Xu B;  Qian JJ;  Ye XL;  Han Q;  Ding D;  Liang JB;  Zhong XR;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Laser-diodes  Photoluminescence  Threshold  Emission  
Tentative analysis of Swirl defects in silicon crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 213, 期号: 3-4, 页码: 276-282
Authors:  Fan TW;  Qian JJ;  Wu J;  Lin LY;  Yuan J;  Fan TW,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Swirl Defect  Silicon  Electron Energy Loss Spectroscopy  
Polishing-related optical anisotropy of semi-insulating GaAs studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 3, 页码: 1695-1697
Authors:  Chen YH;  Wang ZG;  Qian JJ;  Yang Z;  Chen YH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Growth  
氧、硼、磷掺杂对氢化非晶硅中铒1.54μm发光的作用 期刊论文
发光学报, 2000, 卷号: 21, 期号: 3, 页码: 196
Authors:  梁建军;  王永谦;  陈维德;  王占国;  常勇
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