SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots
Liu HY; Xu B; Qian JJ; Ye XL; Han Q; Ding D; Liang JB; Zhong XR; Wang ZG; Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2001
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume90Issue:4Pages:2048-2050
AbstractThe effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 degreesC, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 degreesC, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 degreesC and that of the short-wavelength quantum-dot laser previously reported. (C) 2001 American Institute of Physics.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy Laser-diodes Photoluminescence Threshold Emission
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12132
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Liu HY,Xu B,Qian JJ,et al. Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots[J]. JOURNAL OF APPLIED PHYSICS,2001,90(4):2048-2050.
APA Liu HY.,Xu B.,Qian JJ.,Ye XL.,Han Q.,...&Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2001).Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots.JOURNAL OF APPLIED PHYSICS,90(4),2048-2050.
MLA Liu HY,et al."Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots".JOURNAL OF APPLIED PHYSICS 90.4(2001):2048-2050.
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