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Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 3633
Authors:  Zhou, PY;  Dou, XM;  Wu, XF;  Ding, K;  Li, MF;  Ni, HQ;  Niu, ZC;  Jiang, DS;  Sun, BQ
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In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots 期刊论文
EPL, 2014, 卷号: 107, 期号: 2, 页码: 27008
Authors:  Wu, XF;  Wei, H;  Dou, XM;  He, LX;  Sun, BQ;  Ding, K;  Yu, Y;  Ni, HQ;  Niu, ZC;  Ji, Y;  Li, SS;  Jiang, DS;  Guo, GC
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Photoluminescence studies on self-organized 1.55-mu m InAs/InGaAsP/InP quantum dots under hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 2, 页码: 023510
Authors:  Zhou, PY;  Dou, XM;  Wu, XF;  Ding, K;  Luo, S;  Yang, T;  Zhu, HJ;  Jiang, DS;  Sun, BQ
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Tuning and Identification of Interband Transitions in Monolayer and Bilayer Molybdenum Disulfide Using Hydrostatic Pressure 期刊论文
ACS NANO, 2014, 卷号: 8, 期号: 7, 页码: 7458-7464
Authors:  Dou, XM;  Ding, K;  Jiang, DS;  Sun, BQ
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Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 16, 页码: 1903-1906
Authors:  Zeng, C;  Zhang, SM;  Liu, JP;  Li, DY;  Jiang, DS;  Feng, MX;  Li, ZC;  Zhou, K;  Wang, F;  Wang, HB;  Wang, H;  Yang, H
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Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 卷号: 32, 期号: 3, 页码: 031204
Authors:  Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P;  Le, LC;  Yang, J;  He, XG;  Zhang, SM;  Zhu, JJ;  Wang, H;  Zhang, BS;  Liu, JP;  Yang, H
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Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 16, 页码: 163704
Authors:  Yang, J;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Yang, H;  Chen, P;  Liu, ZS;  Le, LC;  Li, XJ;  He, XG;  Liu, JP;  Zhang, SM;  Wang, H
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Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 10, 页码: 11392-11398
Authors:  Le, LC;  Zhao, DG;  Jiang, DS;  Yang, H;  Chen, P;  Liu, ZS;  Yang, J;  He, XG;  Li, XJ;  Liu, JP;  Zhu, JJ;  Zhang, SM
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Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
THIN SOLID FILMS, 2014, 卷号: 564, 页码: 135-139
Authors:  He, XG;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P;  Le, LC;  Yang, J;  Li, XJ;  Zhang, SM;  Zhu, JJ;  Wang, H;  Yang, H
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Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 卷号: 32, 期号: 5, 页码: 051207
Authors:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P;  Liu, ZS;  Le, LC;  Yang, J;  Li, XJ;  Zhang, SM;  Yang, H
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