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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors:  J. Yang ;   D.G. Zhao;   D.S. Jiang ;   S.T. Liu ;   P. Chen ;   J.J. Zhu ;   F. Liang ;   W. Liu ;   M. Li
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 765, 页码: 245-248
Authors:  H.R. Qi ;   L.K. Yi ;   J.L. Huang ;   S.T. Liu ;   F. Liang ;   M. Zhou ;   D.G. Zhao ;   D.S. Jiang
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Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 97, 期号: 6, 页码: 060407
Authors:  K. K. Meng;   X. P. Zhao;   P. F. Liu;   Q. Liu;   Y. Wu;   Z. P. Li;   J. K. Chen;   J. Miao;   X. G. Xu;   J. H. Zhao;   Y. Jiang
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
Authors:  Y. Jiang;  S. Thapa;  G. D. Sanders;  C. J. Stanton;  Q. Zhang;  J. Kono;  W. K. Lou;  K. Chang;  S. D. Hawkins;  J. F. Klem;  W. Pan;  D. Smirnov;  Z. Jiang
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  W. Liu;  X. Li;  F. Liang;  S. T. Liu;  L. Q. Zhang;  H. Yang
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