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| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
 Adobe PDF(1681Kb) |  Favorite | View/Download：14/0 | Submit date：2019/11/19 |
| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
Adobe PDF(1424Kb) | Favorite | View/Download：12/0 | Submit date：2019/11/19 |
| The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
Adobe PDF(1110Kb) | Favorite | View/Download：9/0 | Submit date：2019/11/19 |
| Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
Adobe PDF(1754Kb) | Favorite | View/Download：11/1 | Submit date：2019/11/19 |
| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
Authors: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang; P. Chen; J.J. Zhu; Z.S. Liu; X. Li; W. Liu; L.Q. Zhang; H. Long; M. Li
Adobe PDF(1153Kb) | Favorite | View/Download：62/0 | Submit date：2018/07/11 |
| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
Authors: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; W. Liu; F. Liang; X. Li; S.T. Liu; L.Q. Zhang; H. Yang
Adobe PDF(763Kb) | Favorite | View/Download：15/0 | Submit date：2018/11/30 |
| Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
Vacuum, 2016, 卷号: 129, 页码: 99-104
Authors: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
Adobe PDF(1644Kb) | Favorite | View/Download：169/2 | Submit date：2017/03/10 |
| Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79
Authors: F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
Adobe PDF(930Kb) | Favorite | View/Download：140/5 | Submit date：2017/03/10 |
| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
Superlattices and Microstructures, 2016, 卷号: 97, 页码: 186-192
Authors: X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
Adobe PDF(1237Kb) | Favorite | View/Download：284/3 | Submit date：2017/03/10 |
| Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 681, 页码: 522-526
Authors: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; J.P. Liu; L.Q. Zhang; H. Yang; Y.T. Zhang; G.T. Du
Adobe PDF(792Kb) | Favorite | View/Download：232/4 | Submit date：2017/03/10 |
