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| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40 Authors: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
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| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文 OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17 Authors: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
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| The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文 Optical Materials, 2018, 卷号: 86, 页码: 460-463 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
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| Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
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| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文 Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68 Authors: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang; P. Chen; J.J. Zhu; Z.S. Liu; X. Li; W. Liu; L.Q. Zhang; H. Long; M. Li
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| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39 Authors: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; W. Liu; F. Liang; X. Li; S.T. Liu; L.Q. Zhang; H. Yang
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| Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文 Vacuum, 2016, 卷号: 129, 页码: 99-104 Authors: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
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| Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文 Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79 Authors: F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
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| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文 Superlattices and Microstructures, 2016, 卷号: 97, 页码: 186-192 Authors: X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
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| Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文 Journal of Alloys and Compounds, 2016, 卷号: 681, 页码: 522-526 Authors: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; J.P. Liu; L.Q. Zhang; H. Yang; Y.T. Zhang; G.T. Du
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