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InGaN量子阱及薄膜材料特性研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  刘炜
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Ingan  量子阱  薄膜  极化效应  局域态  本底载流子浓度  
17 000%/W second-harmonic conversion efficiency in single-crystalline aluminum nitride microresonators 期刊论文
Physics, 2018, 卷号: 113, 页码: 131102
Authors:  Alexander W. Bruch;  Xianwen Liu;  Xiang Guo;  Joshua B. Surya;  Zheng Gong;  Liang Zhang;  Junxi Wang;  Jianchang Yan;  Hong X. Tang
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Ultra-high-Q UV microring resonators based on single-crystalline AlN platform 期刊论文
Physics, 2018, 卷号: 5, 期号: 10, 页码: 1279-1282
Authors:  Xianwen Liu;  Alexander W. Bruch;  Zheng Gong;  Juanjuan Lu;  Joshua B.Surya;  Liang Zhang;  Junxi Wang;  Jianchang Yan;  Hong X. Tang
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Diamine anchored molecular junctions of oligo(phenylene ethynylene) cruciform 期刊论文
CHINESE CHEMICAL LETTERS, 2018, 卷号: 29, 期号: 2, 页码: 271-275
Authors:  Yuqing Liu;   Marco Santella ;   Zhiqiang Fan ;   Xintai Wang ;   Xiangwei Jiang ;  Mogens Brøndsted Nielsen ;   Kasper Nørgaard ;   Bo W. Laursen ;   Jingbo Li ;  Zhongming Wei
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors:  J. Yang ;   D.G. Zhao;   D.S. Jiang ;   S.T. Liu ;   P. Chen ;   J.J. Zhu ;   F. Liang ;   W. Liu ;   M. Li
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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