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Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
H.R. Qi ;   L.K. Yi ;   J.L. Huang ;   S.T. Liu ;   F. Liang ;   M. Zhou ;   D.G. Zhao ;   D.S. Jiang
2018
Source PublicationJournal of Alloys and Compounds
Volume765Pages:245-248
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29327
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang. Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD[J]. Journal of Alloys and Compounds,2018,765:245-248.
APA H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang.(2018).Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD.Journal of Alloys and Compounds,765,245-248.
MLA H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang."Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD".Journal of Alloys and Compounds 765(2018):245-248.
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刘双韬 齐浩然 2018 JAC Com(853KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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