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Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations
J. Yang ;   D.G. Zhao;   D.S. Jiang ;   S.T. Liu ;   P. Chen ;   J.J. Zhu ;   F. Liang ;   W. Liu ;   M. Li
2018
Source PublicationOPTICAL MATERIALS
Volume85Pages:14-17
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29335
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li. Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations[J]. OPTICAL MATERIALS,2018,85:14-17.
APA J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li.(2018).Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations.OPTICAL MATERIALS,85,14-17.
MLA J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li."Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations".OPTICAL MATERIALS 85(2018):14-17.
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