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A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
Authors:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian;  W. S. Zhao;  L. Wang;  M. Guan;  F. Zhang;  G. S. Sun;  Y. P. Zeng
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Polarization-independent plasmonic subtractive color filtering in ultrathin Ag nanodisks with high transmission 期刊论文
Applied Optics, 2016, 卷号: 55, 期号: 1, 页码: 148-152
Authors:  X. L. HU;  L. B. SUN;  BEIBEI ZENG;  L. S. WANG;  Z. G. YU;  S. A. BAI;  S. M. YANG;  L. X. ZHAO;  Q. LI;  M. QIU;  R. Z. TAI;  H. J. FECHT;  J. Z. JIANG;  D. X. ZHANG
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 18, 页码: 181116
Authors:  Zhang SG (Zhang S. G.);  Zhang XW (Zhang X. W.);  Yin ZG (Yin Z. G.);  Wang JX (Wang J. X.);  Dong JJ (Dong J. J.);  Gao HL (Gao H. L.);  Si FT (Si F. T.);  Sun SS (Sun S. S.);  Tao Y (Tao Y.)
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Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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Avalanche Photodiodes  Area  
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 9, 页码: Art.No.092114
Authors:  Wang H (Wang H.);  Huang Y (Huang Y.);  Sun Q (Sun Q.);  Chen J (Chen J.);  Wang LL (Wang L. L.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Zhang SM (Zhang S. M.);  Jiang DS (Jiang D. S.);  Wang YT (Wang Y. T.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
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X-ray-diffraction  Electron-transport  Epitaxial Gan  Band-gap  Dislocations  Sapphire  Aln  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Authors:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  Favorite  |  View/Download:1086/503  |  Submit date:2010/04/11
4h-sic  Homoepitaxial Layers  Surface Morphological Defect  Optical Microscopy  Silicon-carbide  Dislocations  Films