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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
Authors:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG;  P. CHEN;  J. J. ZHU;  Z. S. LIU;  S. T. LIU;  L. Q. ZHANG;  M. LI
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Polarization-independent plasmonic subtractive color filtering in ultrathin Ag nanodisks with high transmission 期刊论文
Applied Optics, 2016, 卷号: 55, 期号: 1, 页码: 148-152
Authors:  X. L. HU;  L. B. SUN;  BEIBEI ZENG;  L. S. WANG;  Z. G. YU;  S. A. BAI;  S. M. YANG;  L. X. ZHAO;  Q. LI;  M. QIU;  R. Z. TAI;  H. J. FECHT;  J. Z. JIANG;  D. X. ZHANG
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Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors:  W. Liu;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  M. Shi;  D. M.Zhao;  X. Li;  J. P. Liu;  S. M. Zhang;  H. Wang;  H. Yang;  Y. T. Zhang;  G. T.Du
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The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 16, 页码: 163708
Authors:  Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.;  Zhu, J. J.;  Le, L. C.;  Yang, J.;  He, X. G.;  Zhang, S. M.;  Zhang, B. S.;  Liu, J. P.;  Yang, H.
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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Authors:  Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
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Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Authors:  Le, L. C.;  Zhao, D. G.;  Jiang, D. S.;  Li, L.;  Wu, L. L.;  Chen, P.;  Liu, Z. S.;  Yang, J.;  Li, X. J.;  He, X. G.;  Zhu, J. J.;  Wang, H.;  Zhang, S. M.;  Yang, H.
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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113105
Authors:  Chen P (Chen, P.);  Feng MX (Feng, M. X.);  Jiang DS (Jiang, D. S.);  Zhao DG (Zhao, D. G.);  Liu ZS (Liu, Z. S.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Le LC (Le, L. C.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
Adobe PDF(1339Kb)  |  Favorite  |  View/Download:789/198  |  Submit date:2013/03/26