SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.); Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
2007
Conference Name6th European Conference on Silicon Carbide and Related Materials
Source PublicationSilicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM
Pages556-557: 109-112
Conference DateSEP, 2006
Conference PlaceNewcastle upon Tyne, ENGLAND
Publication PlaceLAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
PublisherTRANS TECH PUBLICATIONS LTD
ISSN0255-5476
AbstractHomoepitaxial growth of 4H-SiC p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H-2. The surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. The UV photodetectors fabricated on 4H-SiC p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the UV range.
metadata_83chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
KeywordHomoepitaxy 4h-sic Multi-epilayer Uv Detection p(+)-pi-n(-) Ultraviolet Photodetector Epitaxial-growth
Funding OrganizationII VI Inc.; III Vs Review.; Cree Inc.; Compound Semicond.; Dow Corning Compound Semicond Solut.; LPE.; Norstel AB.; SemiSouth.; SiCED.; SiCrystal.; Surface Technol Syst plc.
Subject Area半导体材料
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9852
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Liu, XF ,Sun, GS ,Zhao, YM ,et al. Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2007:556-557: 109-112.
Files in This Item:
File Name/Size DocType Version Access License
2277.pdf(908KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu, XF (Liu, X. F.)]'s Articles
[Sun, GS (Sun, G. S.)]'s Articles
[Zhao, YM (Zhao, Y. M.)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu, XF (Liu, X. F.)]'s Articles
[Sun, GS (Sun, G. S.)]'s Articles
[Zhao, YM (Zhao, Y. M.)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu, XF (Liu, X. F.)]'s Articles
[Sun, GS (Sun, G. S.)]'s Articles
[Zhao, YM (Zhao, Y. M.)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.