SEMI OpenIR  > 中科院半导体材料科学重点实验室
A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition
X. F. Liu; z G. G. Yan; Z. W. Shen; Z. X.Wen; L. X. Tian; W. S. Zhao; L. Wang; M. Guan; F. Zhang; G. S. Sun; Y. P. Zeng
2017
Source PublicationECS Journal of Solid State Science and Technology
Volume6Issue:1Pages:27-31
Subject Area半导体材料
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28600
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
X. F. Liu,z G. G. Yan,Z. W. Shen,et al. A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition[J]. ECS Journal of Solid State Science and Technology,2017,6(1):27-31.
APA X. F. Liu.,z G. G. Yan.,Z. W. Shen.,Z. X.Wen.,L. X. Tian.,...&Y. P. Zeng.(2017).A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition.ECS Journal of Solid State Science and Technology,6(1),27-31.
MLA X. F. Liu,et al."A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition".ECS Journal of Solid State Science and Technology 6.1(2017):27-31.
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