| High efficient GaN-based laser diodes with tunnel junction | |
| M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang | |
| 2013 | |
| Source Publication | Applied Physics Letters
 |
| Volume | 103Issue:4Pages:043508 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24725 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang. High efficient GaN-based laser diodes with tunnel junction[J]. Applied Physics Letters,2013,103(4):043508. |
| APA | M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang.(2013).High efficient GaN-based laser diodes with tunnel junction.Applied Physics Letters,103(4),043508. |
| MLA | M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang."High efficient GaN-based laser diodes with tunnel junction".Applied Physics Letters 103.4(2013):043508. |
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| High efficient GaN-b（870KB） | 限制开放 | License | Application Full Text | |||
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