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High efficient GaN-based laser diodes with tunnel junction
M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
2013
Source PublicationApplied Physics Letters
Volume103Issue:4Pages:043508
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24725
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang. High efficient GaN-based laser diodes with tunnel junction[J]. Applied Physics Letters,2013,103(4):043508.
APA M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang.(2013).High efficient GaN-based laser diodes with tunnel junction.Applied Physics Letters,103(4),043508.
MLA M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang."High efficient GaN-based laser diodes with tunnel junction".Applied Physics Letters 103.4(2013):043508.
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