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The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   M. Li
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Improving the performance of optical antenna for optical phased arrays through high- contrast grating structure on SOI substrate 期刊论文
Optics Express, 2019, 卷号: 27, 期号: 3, 页码: 2703-2712
Authors:  P. F. WANG ;   G. Z. LUO ;   H. Y. YU ;   Y. J. LI ;   M. Q. WANG ;   X. L. ZHOU ;   W. X. CHEN;   Y. J. ZHANG ;   , J. Q. PAN
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Deep ultraviolet light-emitting diodes with improved performance via nanoporous AlGaN template 期刊论文
Optics Express, 2019, 卷号: 27, 期号: 4, 页码: 4917-4926
Authors:  L. Zhang;   Y. N. Guo;   J. C. Yan;   Q. Q. Wu;   X. C. Wei;   J. X. Wang;   J. M. Li
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 97, 期号: 6, 页码: 060407
Authors:  K. K. Meng;   X. P. Zhao;   P. F. Liu;   Q. Liu;   Y. Wu;   Z. P. Li;   J. K. Chen;   J. Miao;   X. G. Xu;   J. H. Zhao;   Y. Jiang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 31189
Authors:  J. B. Li;  X. G. Wu;  G. W. Wang;  Y. Q. Xu;  Z. C. Niu;  X. H. Zhang
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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