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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Authors:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
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4h-sic  Homoepitaxial Layers  Surface Morphological Defect  Optical Microscopy  Silicon-carbide  Dislocations  Films  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
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4h-sic  
红光InAlAs量子点的结构和光学性质 期刊论文
发光学报, 1999, 卷号: 20, 期号: 3, 页码: 230
Authors:  周伟;  梁基本;  徐波;  龚谦;  李含轩;  刘峰奇;  姜卫红;  江潮;  许怀哲;  丁鼎;  张金福;  王占国
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MBE自组织生长多层竖直自对准InAs量子点结构的研究 期刊论文
发光学报, 1997, 卷号: 18, 期号: 3, 页码: 228
Authors:  朱东海;  范缇文;  梁基本;  徐波;  朱战萍;  龚谦;  江潮;  李含轩;  周伟;  王占国
Adobe PDF(265Kb)  |  Favorite  |  View/Download:921/236  |  Submit date:2010/11/23