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Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours
Zeng C (Zeng Chang); Zhang SM (Zhang Shu-Ming); Ji L (Ji Lian); Wang HB (Wang Huai-Bing); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Cao Q (Cao Qing); Chong M (Chong Ming); Duan LH (Duan Li-Hong); Wang H (Wang Hai); Shi YS (Shi Yong-Sheng); Liu SY (Liu Su-Ying); Yang H (Yang Hui); Chen LH (Chen Liang-Hui); Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
2010
Source PublicationCHINESE PHYSICS LETTERS
Volume27Issue:11Pages:Art. No. 114215
AbstractWe report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.
metadata_24国内
Subject Area光电子学
Funding OrganizationSupported by the National Natural Science Foundation of China under Grant Nos 60976045, 60506001, 60776047 and 60836003, and the National Basic Research Program of China under Grant No 2007CB936700.
Indexed BySCI
Language英语
Date Available2010-12-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20654
Collection集成光电子学国家重点实验室
Corresponding AuthorZeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zeng C ,Zhang SM ,Ji L ,et al. Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours[J]. CHINESE PHYSICS LETTERS,2010,27(11):Art. No. 114215.
APA Zeng C .,Zhang SM .,Ji L .,Wang HB .,Zhao DG .,...&Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn.(2010).Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.CHINESE PHYSICS LETTERS,27(11),Art. No. 114215.
MLA Zeng C ,et al."Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours".CHINESE PHYSICS LETTERS 27.11(2010):Art. No. 114215.
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