SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature
Zhang LQ; Zhang SM; Yang H; Cao Q; Ji L; Zhu JJ; Liu ZS; Zhao DG; Jiang DS; Duan LH; Wang H; Shi YS; Liu SY; Chen LH; Liang JW; Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
2008
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume25Issue:4Pages:1281-1283
AbstractRoom-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5 mu m x 800 mu m ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12 degrees and 32 degrees, respectively.
metadata_83[zhang li-qun; zhang shu-ming; yang hui; ji lian; zhu jian-jun; liu zong-shun; zhao de-gang; jiang de-sheng; duan li-hong; wang hai; shi yong-sheng; liu su-ying; liang jun-wu] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [yang hui] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china; [cao qing; chen liang-hui] chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/6720
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhang LQ,Zhang SM,Yang H,et al. Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature[J]. CHINESE PHYSICS LETTERS,2008,25(4):1281-1283.
APA Zhang LQ.,Zhang SM.,Yang H.,Cao Q.,Ji L.,...&Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn.(2008).Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature.CHINESE PHYSICS LETTERS,25(4),1281-1283.
MLA Zhang LQ,et al."Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature".CHINESE PHYSICS LETTERS 25.4(2008):1281-1283.
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