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Interfacial influence on electrical injection and transport characterization of CoFeB|MgO|GaAs-InGaAs quantum wells hetero-structure 期刊论文
Applied Surface Science, 2019, 卷号: 473, 页码: 230-234
Authors:  Y. Tian ;   C. Zhang ;   C. Xiao ;   R. Wang ;   L. Xu ;   X. Devaux ;   Pierre Renucci ;   B. Xu ;   S. Liang ;   C. Yang ;   Y. Lu
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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
Authors:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
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Investigation of Electrode Electrochemical Reactions in CH 3 NH 3 PbBr 3 Perovskite Single-Crystal Field-Effect Transistors 期刊论文
Advanced Materials, 2019, 卷号: 31, 页码: 1902618
Authors:  Junzhan Wang;  Satyaprasad P. Senanayak;  Jie Liu;  Yuanyuan Hu;  Yanjun Shi;  Zelun Li;  Caixin Zhang;  Bingyan Yang;  Longfeng Jiang;  Dawei Di;  Anton V. Ievlev;  Olga S. Ovchinnikova;  Tao Ding;  Huixiong Deng;  Liming Tang;  Yunlong Guo;  Jianpu Wang;  Kai Xiao;  Deepak Venkateshvaran
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The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   M. Li
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The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence 期刊论文
Superlattices and Microstructures, 2019, 卷号: 133, 页码: 106177
Authors:  H.R. Qi ;   S. Zhang ;   S.T. Liu ;   F. Liang ;   L.K. Yi ;   J.L. Huang ;   M. Zhou ;   Z.W. He ;   D.G. Zhao ;   D.S. Jiang
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硅基薄膜太阳能电池高效陷光结构的研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  张淑媛
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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