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T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 页码: 1-5
Authors:  Du, Y.D.;  Cao, H.Z.;  Yan, W.;  Han, W.H.;  Liu, Y.;  Dong, X.Z.;  Zhang, Y.B.;  Jin, F.;  Zhao, Z.S.;  Yang, F.H.;  Duan, X.M.;  Han, W.H.(weihua@semi.ac.cn)
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Ablation  Drain Current  Fabrication  Gallium Nitride  High Electron Mobility Transistors  Photoresists  Ultrashort Pulses  
氮化镓肖特基结紫外探测器的异常特性测量 期刊论文
高技术通讯, 2005, 卷号: 15, 期号: 10, 页码: 62-67
Authors:  刘宗顺;  赵德刚;  朱建军;  张书明;  沈晓明;  段俐宏;  杨辉
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Si(111)衬底无微裂GaN的MOCVD生长 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 4, 页码: 410-414
Authors:  张宝顺;  伍墨;  陈俊;  沈晓明;  冯淦;  刘建平;  史永生;  段丽宏;  朱建军;  杨辉
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Pt/n-GaN肖特基接触的退火行为 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 3, 页码: 279-283
Authors:  张泽洪;  孙元平;  赵德刚;  段俐宏;  王俊;  沈晓明;  冯淦;  冯志宏;  杨辉
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GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
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