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Fast Homoepitaxial Growth of 4H-SiC Films on 4∘ off-Axis Substrates in a SiH4-C2H4-H2 Systemb InAs quantum well structures 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 12, 页码: 8101
Authors:  LIU Bin, SUN Guo-Sheng, LIU Xing-Fang, ZHANG Feng, DONG Lin, ZHENG Liu, YAN Guo-Guo, LIU Sheng-Bei, ZHAO Wan-Shun, WANG Lei, ZENG Yi-Ping, LI Xi-Guang, WANG Zhan-Guo, YANG Fei
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Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 9, 页码: 096105
Authors:  DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei
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具有超薄碳化硅中间层的硅基可协变衬底及制备方法 专利
专利类型: 发明, 申请日期: 2007-08-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨少延;  杨霏;  李成明;  范海波;  陈涌海;  刘志凯;  王占国
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磁控溅射仪衬底固定夹具 专利
专利类型: 发明, 申请日期: 2007-05-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王鹏;  陈诺夫;  尹志岗;  杨霏
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在硅衬底上磁控溅射制备铁磁性锰硅薄膜的方法 专利
专利类型: 发明, 申请日期: 2006-12-27, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘力锋;  陈诺夫;  尹志岗;  杨霏;  柴春林
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用磁控溅射法在镓砷衬底上外延生长铟砷锑薄膜的方法 专利
专利类型: 发明, 申请日期: 2006-11-22, 公开日期: 2009-06-04, 2009-06-11
Inventors:  彭长涛;  陈诺夫;  吴金良;  尹志冈;  杨霏
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在硅衬底上采用磁控溅射法制备氮化铝材料的方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨霏;  陈诺夫
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一种制备三元高K栅介质材料的方法 专利
专利类型: 发明, 申请日期: 2006-05-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李艳丽;  陈诺夫;  刘立峰;  尹志刚;  杨菲;  柴春林
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在硅衬底上生长碳化硅\氮化镓材料的方法 专利
专利类型: 发明, 申请日期: 2006-01-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈诺夫;  杨霏
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As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.043704
Authors:  Wang P (Wang Peng);  Chen NF (Chen Nuofu);  Yin ZG (Yin Zhigang);  Yang F (Yang Fei);  Peng CT (Peng Changtao);  Dai RX (Dai Ruixuan);  Bai YM (Bai Yiming);  Wang, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pwang@semi.ac.cn
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