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Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang;  H;  Liu ZS;  Zhang SM;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address:
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Nitride Materials  Photoconductivity And Photovoltaics  Computer Simulations  Films  
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Molecular-beam Epitaxy  Electron-transport  Band-gap  Films  Sapphire  
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
Authors:  Sun Q;  Zhang JC;  Huang Y;  Chen J;  Wang JF;  Wang H;  Li DY;  Wang YT;  Zhang SM;  Yang H;  Zhou CL;  Guo LP;  Jia QJ;  Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail:
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Nitrides  Multiple Quantum Wells  Cracks  Dislocations  Vacancies X-ray Diffraction  X-ray-diffraction  Edge Dislocations  Gan  Films  Superlattices  Relaxation  Strain  
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Duan LH;  Wang YT;  Yang H;  Zheng WC;  Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
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Gallium Nitride  Mocvd  In Situ Laser Reflectometry  Chemical-vapor-deposition  In-situ  Sapphire Substrate  Nucleation Layers  Films  
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
Authors:  Feng ZH;  Yang H;  Zhang SM;  Duan LH;  Wang H;  Wang YT;  Feng ZH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(161Kb)  |  Favorite  |  View/Download:1138/289  |  Submit date:2010/08/12
Crystal Morphology  Doping  Surface Structure  Metalorgamc Chemical Vapor Deposition  Nitrides  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Phase Epitaxy  Films  Cathodoluminescence