SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
Wang H; Jiang DS; Zhu JJ; Zhao DG; Liu ZS; Wang YT; Zhang SM; Yang H; Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
2009
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume24Issue:5Pages:Art. No. 055001
AbstractThe effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.
metadata_83[wang h.; jiang d. s.; zhu j. j.; zhao d. g.; liu z. s.; wang y. t.; zhang s. m.] chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china; [yang h.] chinese acad sci suzhou inst nanotech & nanobion suzhou 215123 peoples r china
KeywordMolecular-beam Epitaxy Electron-transport Band-gap Films Sapphire
Subject Area光电子学
Funding OrganizationNational Natural Science Fund of China 60506001 6057600360776047National Basic Research Program 2007CB936700 This work was supported by the National Natural Science Fund of China (Grant Nos. 60506001, 60576003 and 60776047) and National Basic Research Program (2007CB936700).
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7201
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Recommended Citation
GB/T 7714
Wang H,Jiang DS,Zhu JJ,et al. The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009,24(5):Art. No. 055001.
APA Wang H.,Jiang DS.,Zhu JJ.,Zhao DG.,Liu ZS.,...&Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn.(2009).The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,24(5),Art. No. 055001.
MLA Wang H,et al."The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 24.5(2009):Art. No. 055001.
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