SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
Chen J; Zhang SM; Zhang BS; Zhu JJ; Feng G; Duan LH; Wang YT; Yang H; Zheng WC; Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
2003
Source PublicationSCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
ISSN1006-9321
Volume46Issue:6Pages:620-626
AbstractThe influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on alpha-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.
metadata_83sichuan univ, dept mat sci, chengdu 610064, peoples r china; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
KeywordGallium Nitride Mocvd In Situ Laser Reflectometry Chemical-vapor-deposition In-situ Sapphire Substrate Nucleation Layers Films
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11388
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
Recommended Citation
GB/T 7714
Chen J,Zhang SM,Zhang BS,et al. Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN[J]. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,2003,46(6):620-626.
APA Chen J.,Zhang SM.,Zhang BS.,Zhu JJ.,Feng G.,...&Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China..(2003).Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN.SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,46(6),620-626.
MLA Chen J,et al."Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN".SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES 46.6(2003):620-626.
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