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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:  Yang XR;  Xu B;  Wang HF;  Zhao GQ;  Shi SH;  Shen XZ;  Li JF;  Wang ZG;  Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com
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Continuous-wave Operation  Emission  Lasers  Wavelength  Excitons  Energy  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
二维GaAs基光子晶体微腔的制作与光谱特性分析 期刊论文
物理学报, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:  彭银生;  叶小玲;  徐波;  牛洁斌;  贾锐;  王占国;  梁松;  杨晓红
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Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5
Authors:  Peng Yinsheng;  Ye Xiaoling;  Xu Bo;  Jin Peng;  Niu Jiebin;  Jia Rui;  Wang Zhanguo
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用于半导体光放大器的宽增益谱量子点材料结构 专利
专利类型: 发明, 专利号: CN200910081987.3, 公开日期: 2011-08-31
Inventors:  刘王来;  叶小玲;  徐波;  王占国
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