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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Cathodoluminescence  Mocvd  Algan  
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 2, 页码: 414-418
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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V/iii Ratio  
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 1, 页码: 72-75
Authors:  Zhao DG;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Growth Rate  Parasitic Reaction  Mocvd  Aln  Gas-phase Reactions  Movpe Growth  Algan Movpe  Alxga1-xn  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 336-341
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang, DS, CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
Authors:  Bian LF;  Jiang DS;  Lu SL;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Interdiffusion  Post-annealing  Quantum Wells  Gainnas/gaas  Molecular-beam Epitaxy  Carrier Localization  Gainnas  Luminescence  Origin  Gaasn  
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
Authors:  Lu SL;  Wang JN;  Huang JS;  Bian LF;  Jiang DS;  Yang CL;  Dai JM;  Ge WK;  Wang YQ;  Zhang JY;  Shen DZ;  Lu SL,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Photoluminescence  Metalorganic Chemical Vapor Deposition  Epilayer  Semiconducting Ii-vi Materials  Molecular-beam Epitaxy  Gap  
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
Authors:  Bian LF;  Jiang DS;  Lu SL;  Huang JS;  Chang K;  Li LH;  Harmand JC;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Quantum Wells  Gainnas  Strain-compensated Ganas Layers  Molecular-beam Epitaxy  Photoluminescence  Lasers  Threshold  
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 499-499
Authors:  Jia R;  Jiang DS;  Liu HY;  Wei YQ;  Xu B;  Wang ZG;  Jia R,Chinese Acad Sci,Inst Semicond,Natl Lab Supelattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
Authors:  Jia R;  Jiang DS;  Liu HY;  Wei YQ;  Xu B;  Wang ZG;  Jia R,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(156Kb)  |  Favorite  |  View/Download:928/377  |  Submit date:2010/08/12
Nanostructures  Molecular Beam Epitaxy  Semiconductor Iii-v Materials  Laser Diodes  1.3 Mu-m  Continuous-wave Operation  Temperature-dependence  Lasing Characteristics  1.3-mu-m  Photoluminescence  Gain