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提高GaN基pin结构性能的紫外探测器及制作方法 专利
专利类型: 发明, 申请日期: 2008-01-09, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉;  梁骏吾;  李向阳;  龚海梅
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提高GaN基肖特基结构性能的紫外探测器及制作方法 专利
专利类型: 发明, 申请日期: 2008-01-09, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉;  梁骏吾;  李向阳;  龚海梅
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Cl2/Ar/BCl3ICP刻蚀对AIGaN的损伤研究 期刊论文
固体电子学研究与进展, 2008, 卷号: 28, 期号: 3, 页码: 420-423
Authors:  陈亮;  亢勇;  赵德刚;  李向阳;  龚海梅
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背照射氮化镓基肖特基结构紫外探测器 专利
专利类型: 发明, 申请日期: 2007-05-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉;  梁骏吾;  李向阳;  龚海梅
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提高铝镓氮材料质量的方法 专利
专利类型: 发明, 申请日期: 2007-05-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉;  梁骏吾;  李向阳;  龚海梅
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Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.062106
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Yang H;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  
Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 253, 期号: 5, 页码: 2452-2455
Authors:  Zhao, DG (Zhao, D. G.);  Liu, ZS (Liu, Z. S.);  Zhu, JJ (Zhu, J. J.);  Zhang, SM (Zhang, S. M.);  Jiang, DS (Jiang, D. S.);  Yang, H (Yang, Hui);  Liang, JW (Liang, J. W.);  Li, XY (Li, X. Y.);  Gong, HM (Gong, H. M.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Al Incorporation  
The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers 期刊论文
MATERIALS LETTERS, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696
Authors:  Wang XL (Wang X. L.);  Zhao DG (Zhao D. G.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: WXL@mail.semi.ac.cn
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Algan  Lt Aln  Taxrd  Dislocation  
Effect of oxidation on the optical and surface properties of AlGaN 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 24, 页码: 8706-8709
Authors:  Wang XL (Wang X. L.);  Zhao DG (Zhao D. G.);  Chen J (Chen J.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Yang H (Yang H.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: WXL@mail.semi.ac.cn
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Oxidation  Algan  Surface Morphology  Ray Photoelectron-spectroscopy  High-power  Gan  Oxide  
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 25, 页码: Art.No.252101
Authors:  Zhao DG (Zhao D. G.);  Jiang DS (Jiang D. S.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Liang JW (Liang J. W.);  Hao XP (Hao X. P.);  Wei L (Wei L.);  Li X (Li X.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Yellow Luminescence  Electron-beam  Vacancies