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Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 3, 页码: 548-551
Authors:  Bian LF;  Jiang D;  Liang XG;  Lu SL;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lfbian@red.semi.ac.cn
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Molecular-beam Epitaxy  
Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates 期刊论文
SOLID STATE COMMUNICATIONS, 2004, 卷号: 132, 期号: 10, 页码: 707-711
Authors:  Bian LF;  Jiang DS;  Tan PH;  Lu SL;  Sun BQ;  Li LH;  Harmand, JC;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lfbian@pdi-berlin.de
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Gaassbn Epilayer  
Study of optical properties in GaAs1-xSbx/GaAs single quantum wells 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 7, 页码: 1761-1765
Authors:  Luo XD;  Bian LF;  Xu ZY;  Luo HL;  Wang YQ;  Wang JN;  Ge WK;  Luo XD,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(212Kb)  |  Favorite  |  View/Download:1038/343  |  Submit date:2010/08/12
Gaassb/gaas  Selectively-excited  Type Ii Transition  Room-temperature  Gaas  Dots  Operation  
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
Authors:  Bian LF;  Jiang DS;  Lu SL;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Interdiffusion  Post-annealing  Quantum Wells  Gainnas/gaas  Molecular-beam Epitaxy  Carrier Localization  Gainnas  Luminescence  Origin  Gaasn  
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
Authors:  Lu SL;  Wang JN;  Huang JS;  Bian LF;  Jiang DS;  Yang CL;  Dai JM;  Ge WK;  Wang YQ;  Zhang JY;  Shen DZ;  Lu SL,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Photoluminescence  Metalorganic Chemical Vapor Deposition  Epilayer  Semiconducting Ii-vi Materials  Molecular-beam Epitaxy  Gap  
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
Authors:  Bian LF;  Jiang DS;  Lu SL;  Huang JS;  Chang K;  Li LH;  Harmand JC;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(176Kb)  |  Favorite  |  View/Download:881/268  |  Submit date:2010/08/12
Quantum Wells  Gainnas  Strain-compensated Ganas Layers  Molecular-beam Epitaxy  Photoluminescence  Lasers  Threshold