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Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
Bian LF; Jiang DS; Lu SL; Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
2003
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume253Issue:1-4Pages:155-160
AbstractThermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordInterdiffusion Post-annealing Quantum Wells Gainnas/gaas Molecular-beam Epitaxy Carrier Localization Gainnas Luminescence Origin Gaasn
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11546
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorBian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Bian LF,Jiang DS,Lu SL,et al. Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells[J]. JOURNAL OF CRYSTAL GROWTH,2003,253(1-4):155-160.
APA Bian LF,Jiang DS,Lu SL,&Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China..(2003).Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells.JOURNAL OF CRYSTAL GROWTH,253(1-4),155-160.
MLA Bian LF,et al."Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells".JOURNAL OF CRYSTAL GROWTH 253.1-4(2003):155-160.
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