SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well
Bian LF; Jiang DS; Lu SL; Huang JS; Chang K; Li LH; Harmand JC; Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
2003
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume250Issue:3-4Pages:339-344
AbstractPhotoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs layers grown by molecular beam epitaxy are investigated. The temperature-dependent PL spectra of GaInNAs/GaAs QW with and without GaNAs layers are compared and carefully studied. It is shown that the introduction of GaNAs layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. The PL peak position up to 1.41 mum is observed at the room temperature. After adding the GaNAs layers into QW structures, there is no essential deterioration of luminescence efficiency. N-induced localization states are also not remarkably influenced. It implies that with optimized growth condition, high-quality GaInNAs/GaAs QWs with strain-compensated GaNAs layers can be achieved. (C) 2003 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china; cnrs, lpn, f-91460 marcoussis, france
KeywordQuantum Wells Gainnas Strain-compensated Ganas Layers Molecular-beam Epitaxy Photoluminescence Lasers Threshold
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11630
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorBian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Bian LF,Jiang DS,Lu SL,et al. The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well[J]. JOURNAL OF CRYSTAL GROWTH,2003,250(3-4):339-344.
APA Bian LF.,Jiang DS.,Lu SL.,Huang JS.,Chang K.,...&Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China..(2003).The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well.JOURNAL OF CRYSTAL GROWTH,250(3-4),339-344.
MLA Bian LF,et al."The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well".JOURNAL OF CRYSTAL GROWTH 250.3-4(2003):339-344.
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