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Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:  Li YF;  Liu FQ;  Xu B;  Ye XL;  Ding D;  Sun ZZ;  Jiang WH;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Strained Islands  Gaas  Organization  Inp(001)  Lasers  Ingaas  Layer  
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates 期刊论文
APPLIED SURFACE SCIENCE, 2000, 卷号: 167, 期号: 3-4, 页码: 191-196
Authors:  Li YF;  Ye XL;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Sun ZZ;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Vapor-phase Epitaxy  Quantum Dots  Islands  Inp(001)  Ingaas  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 164-169
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(192Kb)  |  Favorite  |  View/Download:862/264  |  Submit date:2010/08/12
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 134-140
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Inst Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 205, 期号: 4, 页码: 607-612
Authors:  Jiang WH;  Xu HZ;  Xu B;  Wu J;  Ye XL;  Liu HY;  Zhou W;  Sun ZZ;  Li YF;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(479Kb)  |  Favorite  |  View/Download:821/244  |  Submit date:2010/08/12
Quantum Dots  Ingaas/ingaalas  Adjusting Layer  Molecular Beam Epitaxy  High Index  Gaas