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无权访问的条目 期刊论文
Authors:  Li J (Li Jun);  Chang K (Chang Kai);  Peeters FM (Peeters F. M.);  Li, J, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: kchang@red.semi.ac.cn
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无权访问的条目 期刊论文
Authors:  Ding K (Ding, K.);  Zeng YP (Zeng, Y. P.);  Wei XC (Wei, X. C.);  Li ZC (Li, Z. C.);  Wang JX (Wang, J. X.);  Lu HX (Lu, H. X.);  Cong PP (Cong, P. P.);  Yi XY (Yi, X. Y.);  Wang GH (Wang, G. H.);  Li JM (Li, J. M.);  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dingkai@red.semi.ac.cn
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无权访问的条目 期刊论文
Authors:  梁继然;  胡明;  王晓东;  李贵柯;  季安;  杨富华;  刘剑;  吴南健;  陈弘达
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红光铝镓铟磷半导体激光器光纤耦合模块的制备方法 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  徐云;  陈良惠;  张玉芳;  宋国峰;  李玉璋;  种明;  郑婉华;  曹青
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以二氧化硅为掩模定位生长量子点的方法 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  任芸芸;  徐波;  周惠英;  刘明;  李志刚;  王占国
Adobe PDF(298Kb)  |  Favorite  |  View/Download:1104/234  |  Submit date:2009/06/11
氮化镓基蓝光激光器的制作方法 专利
专利类型: 发明, 申请日期: 2008-02-27, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李慧;  种明
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无权访问的条目 期刊论文
Authors:  张艳;  陈伟;  任民;  鞠昱;  韩威;  张邦宏;  张雅丽;  谢亮;  祝宁华
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无权访问的条目 期刊论文
Authors:  韩威;  张雅丽;  张艳;  任民;  李亮;  张红广;  谢亮;  祝宁华
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无权访问的条目 期刊论文
Authors:  Li RY (Li R. Y.);  Wang ZG (Wang Z. G.);  Xu B (Xu B.);  Jin P (Jin P.);  Guo X (Guo X.);  Chen M (Chen M.);  Li, RY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ryli@red.semi.ac.cn
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Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  Favorite  |  View/Download:919/197  |  Submit date:2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide