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Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011206
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  L. Q. Zhang;  H. Yang
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Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 31189
Authors:  J. B. Li;  X. G. Wu;  G. W. Wang;  Y. Q. Xu;  Z. C. Niu;  X. H. Zhang
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 2, 页码: 025324
Authors:  R. W. Wu;  G. D. Yuan;  K. C. Wang;  T. B. Wei;  Z. Q. Liu;  G. H. Wang;  J. X. Wang;  J. M. Li
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文
APPLIED OPTICS, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  L. C. LE;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  L. Q. ZHANG;  J. Q. LIU;  H. YANG
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The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 16, 页码: 163708
Authors:  Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.;  Zhu, J. J.;  Le, L. C.;  Yang, J.;  He, X. G.;  Zhang, S. M.;  Zhang, B. S.;  Liu, J. P.;  Yang, H.
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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth 期刊论文
ECS Solid State Lett., 2013, 卷号: 2, 期号: 9, 页码: 73-75
Authors:  J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
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