SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
以二氧化硅为掩模定位生长量子点的方法
任芸芸; 徐波; 周惠英; 刘明; 李志刚; 王占国
2008-12-03
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-05-31
Language中文
Application NumberCN200710099863.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4247
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
任芸芸,徐波,周惠英,等. 以二氧化硅为掩模定位生长量子点的方法[P]. 2008-12-03.
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