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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Observation of photogalvanic current for interband absorption in InN films at room temperature
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Tang, CG
;
Chen, YH
;
Liu, Y
;
Zhang, RQ
;
Liu, XL
;
Wang, ZG
;
Zhang, R
;
Zhang, Z
;
Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)
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浏览/下载:1897/374
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提交时间:2010/03/09
Quantum-wells
Spin
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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浏览/下载:1738/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
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浏览/下载:1596/258
  |  
提交时间:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)
会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:
Yu JZ
;
Li C
;
Cheng BW
;
Wang QM
;
Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
Adobe PDF(459Kb)
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浏览/下载:1207/218
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提交时间:2010/11/15
Dbr (Distributed Bragg Reflector)
Mqw (Multiple Quantum Wells)
Optical Fiber Communication
Photodiode
Rce-pd (Resonant-cavity-enhanced Photodiode)
Responsivity
Sige/si
Soi
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
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收藏
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浏览/下载:1558/405
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain
Growth and photoluminescence of InAlGaN films
会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:
Li DB
;
Dong X
;
Huang JS
;
Liu XL
;
Xu ZY
;
Wang ZG
;
Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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收藏
  |  
浏览/下载:1381/347
  |  
提交时间:2010/10/29
Multiple-quantum Wells
Quaternary Alloys
Optical-properties
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Ye XL
;
Chen YH
;
Xu B
;
Wang ZG
;
Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)
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收藏
  |  
浏览/下载:1114/220
  |  
提交时间:2010/11/15
Reflectance-difference Spectroscopy
Indium Segregation
Ingaas/gaas Quantum Wells
Epitaxy-grown Ingaas/gaas
Surface Segregation
Interface
Optical characterization of the Ge/Si (001) islands in multilayer structure
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Huang CJ
;
Zuo YH
;
Li C
;
Li DZ
;
Cheng BW
;
Luo LP
;
Yu JZ
;
Wang QM
;
Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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收藏
  |  
浏览/下载:1423/297
  |  
提交时间:2010/10/29
Ge/si Islands
Quantum Dot
Band Alignment
Pl
Si/si1-xgex Quantum-wells
Stranski-krastanov Growth
Ii Band Alignment
Ge Islands
Temperature-dependence
Photoluminescence
Layers
Luminescence
Organization
Mechanism
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
;
Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)
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收藏
  |  
浏览/下载:1246/219
  |  
提交时间:2010/11/15
Adsorption
Characterization
Radiation
Molecular Beam Epitaxy
Nitrides
Surface-emitting Laser
Quantum-wells
Operation
Range
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Sun BQ
;
Jiang DS
;
Pan Z
;
Li LH
;
Wu RH
;
Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)
  |  
收藏
  |  
浏览/下载:1169/261
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Semiconducting Iiiv Materials
Luminescence
Gaasn