SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Observation of photogalvanic current for interband absorption in InN films at room temperature
Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z; Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
2008
Conference Name2nd IEEE International Nanoelectronics Conference
Source Publication2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
PagesVOLS 1-3: 1066-1069
Conference DateMAR 24-27, 2008
Conference PlaceShanghai, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-1-4244-1572-4
AbstractThe linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sip when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.
metadata_83[tang, c. g.; chen, y. h.; liu, y.; zhang, r. q.; liu, x. l.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordQuantum-wells Spin
Funding OrganizationIEEE.
Subject Area半导体材料
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7758
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorTang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Tang, CG,Chen, YH,Liu, Y,et al. Observation of photogalvanic current for interband absorption in InN films at room temperature[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 1066-1069.
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