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半导体激光器热沉 专利
专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王大拯;  冯晓明;  王俊;  吕卉;  李伟;  刘媛媛;  刘素平;  马骁宇
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半导体激光器热沉管道 专利
专利类型: 实用新型, 申请日期: 2008-04-16, 公开日期: 2009-06-04
Inventors:  王大拯;  王翠鸾;  仲莉;  韩淋;  崇峰;  史慧玲;  王冠;  胡理科;  刘素平;  马骁宇
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自动搅拌滴料桶 专利
专利类型: 实用新型, 申请日期: 2008-04-02, 公开日期: 2009-06-04
Inventors:  王大拯;  王俊;  吕卉;  李伟;  刘秀英;  张海艳;  赖剑雷;  刘素平;  马骁宇
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Effect on nitrogen acceptor as Mg is alloyed into ZnO 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 6, 页码: Art. No. 062110
Authors:  Gai, YQ;  Yao, B;  Wei, ZP;  Li, YF;  Lu, YM;  Shen, DZ;  Zhang, JY;  Zhao, DX;  Fan, XW;  Li, JB;  Xia, JB;  Yao, B, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, POB 912, Beijing 10083, Peoples R China. 电子邮箱地址: yaobin196226@yahoo.com.cn;  jbli@semi.ac.cn
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P-type Zno  Ii-vi  Band-gap  Semiconductors  Films  Mgxzn1-xo  Epitaxy  
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
Authors:  Wang JX;  Wang XL;  Sun DZ;  Li JM;  Zeng YP;  Hu GX;  Liu HX;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
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Molecular-beam Epitaxy  Ion-scattering Spectroscopy  Lattice Polarity  Single-crystals  Films  Polarization  Gan(0001)  Surfaces  Growth  Diodes  
GSMBE生长SiGe/Si材料的原位掺杂控制技术 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 2, 页码: 142-144
Authors:  黄大定;  刘超;  李建平;  高斐;  孙殿照;  朱世荣;  孔梅影
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RF-MBE生长AlN/GaN超晶格结构二维电子气材料 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 6, 页码: 602-605
Authors:  胡国新;  王晓亮;  孙殿照;  王军喜;  刘宏新;  刘成海;  曾一平;  李晋闽;  林兰英
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MBE生长的跨导为186 mS/mm的AlGaN/GaN HEMT 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 4, 页码: 484-488
Authors:  王晓亮;  胡国新;  王军喜;  刘宏新;  孙殿照;  曾一平;  李晋闽;  孔梅影;  林兰英;  刘新宇;  刘键;  钱鹤
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气源分子束外延生长锗硅异质结双极晶体管材料掺杂方法 专利
专利类型: 发明, 申请日期: 2002-10-16, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄大定;  李建平;  高斐;  林燕霞;  孙殿照;  刘金平;  朱世荣;  孔梅影
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Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235
Authors:  Luo MC;  Wang XL;  Li JM;  Liu HX;  Wang L;  Sun DZ;  Zeng YP;  Lin LY;  Luo MC,Chinese Acad Sci,Inst Semicond,Novel Semicond Mat Lab,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Raman  Transmission Electron Microscopy  Molecular Beam Epitaxy  Aluminium Nitride  Electron-affinity  Gan  Si(111)