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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083513
Authors:  Zhou GY (Zhou G. Y.);  Chen YH (Chen Y. H.);  Tang CG (Tang C. G.);  Liang LY (Liang L. Y.);  Jin P (Jin P.);  Wang ZG (Wang Z. G.);  Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum-dot System  Island Formation  In-situ  Evolution  Gaas  Photoluminescence  
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103108
Authors:  Tang CG;  Chen YH;  Xu B;  Ye XL;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Aluminium Compounds  Gallium Arsenide  Iii-v Semiconductors  Internal Stresses  Reflectivity  Semiconductor Heterojunctions  Semiconductor Quantum Wells  
Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 卷号: 21, 期号: 37, 页码: Art. No. 375802
Authors:  Tang CG;  Chen YH;  Liu Y;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Spin  Semiconductors  
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
Authors:  Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Molecular-beam Epitaxy  
Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 1, 页码: Art. No. 013106
Authors:  Zhou, ZY;  Tang, CG;  Chen, YH;  Wang, ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Fine-structure  Quantum-wells  Gaas/alas Superlattices  Semiconductors  Temperature  Hole  
Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 6, 页码: Art. No. 063122
Authors:  Zhao, C;  Chen, YH;  Xu, B;  Tang, CG;  Wang, ZG;  Ding, F;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum Dots  Inas  
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
Authors:  Tang, CG;  Chen, YH;  Liu, Y;  Zhang, RQ;  Liu, XL;  Wang, ZG;  Zhang, R;  Zhang, Z;  Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Quantum-wells  Spin  
Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture 期刊论文
PHYSICAL REVIEW B, 2007, 卷号: 76, 期号: 12, 页码: Art.No.125404
Authors:  Ding F (Ding Fei);  Chen YH;  Tang CG;  Xu B (Xu Bo);  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Inst Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@semi.ac.cn
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Temperature-dependence  
Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 11, 页码: Art.No.113122
Authors:  Tang CG;  Chen YH;  Ye XL;  Wang ZG;  Zhang WF;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Multiple-quantum Wells