SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
Sun BQ; Jiang DS; Pan Z; Li LH; Wu RH; Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
2001
Conference Name11th International Conference on Molecular Beam Epitaxy (MBE-XI)
Source PublicationJOURNAL OF CRYSTAL GROWTH, 227
Pages501-505
Conference DateSEP 11-15, 2000
Conference PlaceBEIJING, PEOPLES R CHINA
Publication PlacePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
PublisherELSEVIER SCIENCE BV
ISSN0022-0248
AbstractWe have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordMolecular Beam Epitaxy Quantum Wells Semiconducting Iiiv Materials Luminescence Gaasn
Funding OrganizationChina Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
Subject Area半导体物理
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/14941
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Sun BQ,Jiang DS,Pan Z,et al. Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:501-505.
Files in This Item:
File Name/Size DocType Version Access License
2916.pdf(112KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Sun BQ]'s Articles
[Jiang DS]'s Articles
[Pan Z]'s Articles
Baidu academic
Similar articles in Baidu academic
[Sun BQ]'s Articles
[Jiang DS]'s Articles
[Pan Z]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Sun BQ]'s Articles
[Jiang DS]'s Articles
[Pan Z]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.