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MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  收藏  |  浏览/下载：1530/238  |  提交时间：2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Xu DP;  Yang H;  Li JB;  Li SF;  Zhao DG;  Wang YT;  Sun XL;  Wu RH;  Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
Adobe PDF(194Kb)  |  收藏  |  浏览/下载：1176/252  |  提交时间：2010/11/15
Cubic Gan  Buffer Layer  Atomic Force Microscopy  Reflection High-energy Electron Diffraction  Movpe  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)  |  收藏  |  浏览/下载：1412/262  |  提交时间：2010/11/15
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  收藏  |  浏览/下载：1373/285  |  提交时间：2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates 会议论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (4), SALT LAKE CITY, UTAH, JAN 16-20, 2000
作者:  Yang Z;  Sou IK;  Chen YH;  Yang Z Hong Kong Univ Sci & Technol Adv Mat Res Inst Clearwater Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(59Kb)  |  收藏  |  浏览/下载：1036/199  |  提交时间：2010/11/15
Reflectance Difference Spectroscopy  Znse/gaas Interface  States  Gaas  
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen LH;  Xu ZT;  Ma XY;  Zhang JM;  Yang GW;  Xu JY;  Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1210/283  |  提交时间：2010/11/15
High Power  Al-free Laser  Communication  Epitaxy  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1558/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas  
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots 会议论文
PHYSICA B-CONDENSED MATTER, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Wang H;  Niu ZC;  Zhu HJ;  Wang ZM;  Jiang DS;  Feng SL;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1332/261  |  提交时间：2010/11/15
Quantum Dot  Growth Interruption  Quantum Dot Laser