Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition
	Xu DP; Yang H; Li JB; Li SF; Zhao DG; Wang YT; Sun XL; Wu RH; Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
	2000
会议名称	1st Asian Conference on Chemical Vapour Deposition
会议录名称	THIN SOLID FILMS, 368 (2)
页码	279-282
会议日期	MAY 10-13, 1999
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	chinese acad sci, natl res ctr optoelect technol, inst semicond, beijing 100864, peoples r china
摘要	We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.
关键词	Cubic Gan Buffer Layer Atomic Force Microscopy Reflection High-energy Electron Diffraction Movpe
学科领域	光电子学
主办者	Chinese Vacuum Soc, Thin Films Comm.; Chinese Electr Soc, Thin Films Comm.; Nat Sci Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14981
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
推荐引用方式 GB/T 7714	Xu DP,Yang H,Li JB,et al. Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:279-282.

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